- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Packaging :
- Technology :
- Id - Continuous Drain Current :
- Vgs - Gate-Source Breakdown Voltage :
- 選択したフィルタ :
8 プロダクト
絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Vgs - Gate-Source Breakdown Voltage | Gain | Transistor Type | Maximum Drain Gate Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
見積もりを取得 |
933
在庫あり
|
Wolfspeed / Cree | RF JFET Transistors GaN HEMT DC-6.0GHz, 6 Watt | SMD/SMT | QFN-6 | + 150 C | Reel | 6.9 W | - | GaN | N-Channel | 120 V | 0.75 A | - 10 V to + 2 V | 13 dB | HEMT | - | ||
|
|
見積もりを取得 |
171
在庫あり
|
Wolfspeed / Cree | RF JFET Transistors GaN HEMT DC-6.0GHz, 6 Watt | SMD/SMT | 440109 | + 150 C | Tube | 9 W | - | GaN | N-Channel | 120 V | 0.75 A | - 10 V to + 2 V | 13 dB | HEMT | - | ||
|
|
見積もりを取得 |
60
在庫あり
|
Wolfspeed / Cree | RF JFET Transistors GaN HEMT Die DC-6.0GHz, 60 Watt | SMD/SMT | Bare Die | - | Waffle | 60 W | - | GaN | N-Channel | 120 V | 6 A | - 10 V to + 2 V | 13 dB | HEMT | - | ||
|
|
見積もりを取得 |
325
在庫あり
|
Qorvo | RF JFET Transistors 8-12GHz 5W GaN PAE 50% Gain 13dB | SMD/SMT | QFN-16 | + 225 C | Tray | 6 W | 8.4 W | GaN SiC | N-Channel | 32 V | 326 mA | - 2.7 V | 13 dB | HEMT | |||
|
|
見積もりを取得 |
40
在庫あり
|
Wolfspeed / Cree | RF JFET Transistors GaN HEMT Die DC-6.0GHz, 120 Watt | SMD/SMT | Bare Die | - | Waffle | 120 W | - | GaN | N-Channel | 120 V | 12 A | - 10 V to + 2 V | 13 dB | HEMT | - | ||
|
|
見積もりを取得 |
100
在庫あり
|
Qorvo | RF JFET Transistors DC-20GHz NF 1.1dB Gain 13dB P1dB 26dBm | SMD/SMT | + 150 C | Gel Pack | 1.4 W | GaAs | 8 V | 129 mA | - 15 V | 13 dB | pHEMT | ||||||
|
|
見積もりを取得 |
23
在庫あり
|
MACOM | RF JFET Transistors DC-4.0GHz P1dB 43dBm Gain 13dB GaN | Screw | + 200 C | Tray | 44 W | GaN Si | N-Channel | 100 V | 4 mA | 3 V | 13 dB | HEMT | |||||
|
|
見積もりを取得 |
10
在庫あり
|
NXP Semiconductors | RF JFET Transistors Broadband RF power GaN HEMT | SMD/SMT | SOT1227B | + 150 C | Tube | GaN Si | N-Channel | 150 V | 5.1 A | 3 V | 13 dB | HEMT |