- Package / Case :
- Maximum Operating Temperature :
- Packaging :
- Pd - Power Dissipation :
- Technology :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Vgs - Gate-Source Breakdown Voltage :
- 選択したフィルタ :
8 プロダクト
絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Vgs - Gate-Source Breakdown Voltage | Gain | Transistor Type | Maximum Drain Gate Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
見積もりを取得 |
2,918
在庫あり
|
Broadcom / Avago | RF JFET Transistors Transistor GaAs Low Noise | SMD/SMT | SOT-343 | + 160 C | Reel | 300 mW | GaAs | N-Channel | 5.5 V | 80 mA | - 5 V | 18 dB | pHEMT | |||||
|
見積もりを取得 |
200
在庫あり
|
Wolfspeed / Cree | RF JFET Transistors GaN HEMT Die DC-6.0GHz, 40 Watt | SMD/SMT | Bare Die | - | Gel Pack | 40 W | - | GaN | N-Channel | 50 V | 3.2 A | - | 18 dB | HEMT | - | |||
|
見積もりを取得 |
60
在庫あり
|
Wolfspeed / Cree | RF JFET Transistors GaN HEMT Die DC-6.0GHz, 170 Watt | SMD/SMT | Bare Die | - | Gel Pack | 170 W | - | GaN | N-Channel | 50 V | 12.6 A | - | 18 dB | HEMT | - | |||
|
見積もりを取得 |
120
在庫あり
|
Qorvo | RF JFET Transistors 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V | SMD/SMT | QFN-16 | - | Tray | 6 W | 7.5 W | GaN SiC | P-Channel | 32 V | 600 mA | - 2.7 V | 18 dB | HEMT | - | |||
|
見積もりを取得 |
4,778
在庫あり
|
Broadcom / Avago | RF JFET Transistors Transistor GaAs Low Noise | SMD/SMT | SOT-343 | + 160 C | Bulk | 300 mW | GaAs | N-Channel | 5.5 V | 80 mA | - 5 V | 18 dB | pHEMT | |||||
|
ビュー | Wolfspeed / Cree | RF JFET Transistors GaN HEMT DC-6.0GHz, 30 Watt | SMD/SMT | DFN | + 150 C | Reel | 30 W | 21.6 W | GaN | N-Channel | 84 V | 7 A | - 10 V, 2 V | 18 dB | HEMT | 28 V | ||||
|
ビュー | Broadcom / Avago | RF JFET Transistors Transistor GaAs Low Noise | SMD/SMT | SOT-343 | + 160 C | Reel | 300 mW | GaAs | N-Channel | 5.5 V | 80 mA | - 5 V | 18 dB | pHEMT | ||||||
|
ビュー | Qorvo | RF JFET Transistors DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN | SMD/SMT | + 250 C | Tray | 260 W | 288 W | GaN SiC | N-Channel | 36 V | 24 A | 145 V | 18 dB | HEMT | 48 V |