- メーカー :
- Package / Case :
- Packaging :
- Vgs - Gate-Source Breakdown Voltage :
- Gain :
- Transistor Type :
6 プロダクト
絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Technology | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Vgs - Gate-Source Breakdown Voltage | Gain | Transistor Type | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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見積もりを取得 |
319
在庫あり
|
Broadcom / Avago | RF JFET Transistors Transistor GaAs High Linearity | SMD/SMT | LPCC-8 | + 150 C | Bulk | 1 W | GaAs | 7 V | 300 mA | - 5 V to 1 V | 20 dB | EpHEMT | |||
|
見積もりを取得 |
1,293
在庫あり
|
Broadcom / Avago | RF JFET Transistors Transistor GaAs High Linearity | SMD/SMT | SOT-89 | + 150 C | Bulk | 1 W | GaAs | 7 V | 300 mA | - 5 V to 1 V | 15.5 dB | EpHEMT | |||
|
見積もりを取得 |
150
在庫あり
|
Qorvo | RF JFET Transistors DC-12GHz 1mm Pwr pHEMT (0.35um) | SMD/SMT | Die 4 | + 150 C | Gel Pack | GaAs | 12 V | 300 mA | - 14 V | 11 dB | pHEMT | ||||
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ビュー | Broadcom / Avago | RF JFET Transistors Transistor GaAs High Linearity | SMD/SMT | LPCC-8 | + 150 C | Reel | 1 W | GaAs | 7 V | 300 mA | - 5 V to 1 V | 20 dB | EpHEMT | ||||
|
ビュー | Broadcom / Avago | RF JFET Transistors Transistor GaAs High Linearity | SMD/SMT | SOT-89 | + 150 C | Reel | 1 W | GaAs | 7 V | 300 mA | - 5 V to 1 V | 15.5 dB | EpHEMT | ||||
|
ビュー | Broadcom / Avago | RF JFET Transistors Transistor GaAs High Linearity | SMD/SMT | LPCC-8 | + 150 C | Reel | 1 W | GaAs | 7 V | 300 mA | - 5 V to 1 V | 20 dB | EpHEMT |