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3 プロダクト
| 絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,245
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ROHM Semiconductor | MOSFET 1700V 3.7A N-MOSFET Silicon Carbide SiC | - 6 V to + 22 V | Through Hole | TO-3PFM-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 1700 V | 3.7 A | 1.5 Ohms | 1.6 V | 14 nC | Enhancement | ||
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ビュー | Renesas Electronics | MOSFET MOSFET | TO-3PFM-3 | Tube | Si | |||||||||||||||
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ビュー | Renesas Electronics | MOSFET MOSFET - Pb Free | TO-3PFM-3 | Tube | Si |
