- Vgs - Gate-Source Voltage :
- Rds On - Drain-Source Resistance :
- 選択したフィルタ :
2 プロダクト
| 絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Qualification | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Texas Instruments | MOSFET Automotive 30-V N-Channel NexFET? Power MOSFET 6-WS... | 10 V, 8 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | AEC-Q100 | 1 Channel | Si | N-Channel | 30 V | 5 A | 24 mOhms | 1.3 V | 2.1 nC | Enhancement | NexFET | ||
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Texas Instruments | MOSFET Auto 30-V N-Ch NexFET Pwr MOSFET | 10 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | AEC-Q100 | 1 Channel | Si | N-Channel | 30 V | 5 A | 32 mOhms | 1.3 V | 2.1 nC | NexFET |
