- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Tradename :
- 選択したフィルタ :
4 プロダクト
絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
見積もりを取得 |
734
在庫あり
|
Infineon / IR | MOSFET HEXFET Power MOSFET 40V Single N-Channel | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 426 A | 970 mOhms | 2.2 V | 460 nC | Enhancement | StrongIRFET | |||
|
見積もりを取得 |
258
在庫あり
|
Infineon / IR | MOSFET 40V 195A 1.4mOhm HEXFET 366W 300nC | 20 V | Through Hole | TO-247-3 | Tube | Si | N-Channel | 40 V | 404 A | 1.3 mOhms | 460 nC | StrongIRFET | ||||||||
|
見積もりを取得 |
8
在庫あり
|
IXYS | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | Si | N-Channel | 150 V | 240 A | 5.2 mOhms | 460 nC | Enhancement | HiPerFET | |||||
|
見積もりを取得 |
68
在庫あり
|
Infineon Technologies | MOSFET 40V 1.3mOhm 195A HEXFET 375W 300nC | 20 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 40 V | 409 A | 1.3 mOhms | 460 nC | StrongIRFET |