- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Tradename :
- 選択したフィルタ :
6 プロダクト
| 絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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見積もりを取得 |
46
在庫あり
|
IXYS | MOSFET 160A 300V | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 160 A | 19 mOhms | 5 V | 335 nC | Enhancement | |||
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見積もりを取得 |
56
在庫あり
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IXYS | MOSFET 30 Amps 600V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 240 mOhms | 4.5 V | 335 nC | Enhancement | ||||
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見積もりを取得 |
15
在庫あり
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IXYS | MOSFET TRENCH HIPERFET PWR MOSFET 300V 130A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 130 A | 19 mOhms | 5 V | 335 nC | Enhancement | GigaMOS | ||
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見積もりを取得 |
8
在庫あり
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IXYS | MOSFET 160A 300V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 300 V | 160 A | 19 mOhms | 5 V | 335 nC | Enhancement | GigaMOS | |||
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見積もりを取得 |
529
在庫あり
|
IXYS | MOSFET 30 Amps 600V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 240 mOhms | 4.5 V | 335 nC | Enhancement | Linear L2 | ||
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ビュー | IXYS | MOSFET 30 Amps 600V | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 240 mOhms | 4.5 V | 335 nC | Enhancement | Linear L2 |
