- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- 選択したフィルタ :
3 プロダクト
絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
見積もりを取得 |
3,378
在庫あり
|
Fairchild Semiconductor | MOSFET 30V N-Channel Power Trench | 12 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 15 A | 6.1 mOhms | 19.4 nC | Enhancement | PowerTrench | ||||
|
ビュー | Taiwan Semiconductor | MOSFET 600V 9.5A 0.38OHMS N Channel Power Mosfet | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | N-Channel | 600 V | 9.5 A | 0.26 Ohms | 2 V | 19.4 nC | Enhancement | ||||||
|
ビュー | Taiwan Semiconductor | MOSFET 600V, 9,5A, 0,38OHMS N channel Mosfet | +/- 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Reel | 1 Channel | N-Channel | 600 V | 9.5 A | 0.26 Ohms | 2 V | 19.4 nC | Enhancement |