- Number of Channels :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- 選択したフィルタ :
15 プロダクト
| 絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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見積もりを取得 |
12,981
在庫あり
|
Diodes Incorporated | MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 1 A | 190 mOhms | 2 nC | Enhancement | ||||
|
|
|
見積もりを取得 |
17,914
在庫あり
|
Diodes Incorporated | MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 1 A | 190 mOhms | 2.8 V | 2 nC | Enhancement | |||
|
|
見積もりを取得 |
7,326
在庫あり
|
ON Semiconductor | MOSFET NCH 1.7A 30V SOT-363 | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 1.8 A | 188 mOhms | 2.6 V | 2 nC | ||||
|
|
見積もりを取得 |
8,300
在庫あり
|
ON Semiconductor | MOSFET LOW-NOISE AMPLIFIER | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.8 A | 180 mOhms | 2 nC | |||||
|
|
見積もりを取得 |
5,119
在庫あり
|
Infineon Technologies | MOSFET MOSFT P-Ch -30V -2.3A 165mOhm | 20 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2.3 A | 270 mOhms | 2 nC | |||||||
|
|
見積もりを取得 |
1,920
在庫あり
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X1-DFN1212-3,3K | 8 V | SMD/SMT | X1-DFN1212-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.73 A | 200 mOhms | 2 nC | Enhancement | ||||
|
|
見積もりを取得 |
2,733
在庫あり
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X2-DFN1006-3 T&R 3K | 8 V | SMD/SMT | X2-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1 A | 700 mOhms | 500 mV | 2 nC | Enhancement | |||
|
|
見積もりを取得 |
8,064
在庫あり
|
Texas Instruments | MOSFET N-Channel NexFET Power MOSFET | 10 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 22 A | 23 mOhms | 1.1 V | 2 nC | NexFET | |||
|
|
見積もりを取得 |
4,243
在庫あり
|
Texas Instruments | MOSFET CSD13383F4 12-V Ncha MOSFET 3-PICOSTAR | 10 V | SMD/SMT | Picostar-3 | Reel | 1 Channel | Si | N-Channel | 12 V | 2.9 A | 53 mOhms | 2 nC | NexFET | ||||||
|
|
見積もりを取得 |
2,660
在庫あり
|
ROHM Semiconductor | MOSFET 4V Drive Nch MOSFET Drive Nch | 20 V | SMD/SMT | SOT-323T-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 1.5 A | 2.5 V | 2 nC | |||||||
|
|
|
見積もりを取得 |
889
在庫あり
|
Texas Instruments | MOSFET 12V N-Channel FemtoFET MOSFET | 10 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 2.9 A | 44 mOhms | 1 V | 2 nC | Enhancement | FemtoFET | ||
|
|
見積もりを取得 |
843
在庫あり
|
Panasonic | MOSFET MOSFET 600VDC 190mohm X-GaN | SMD/SMT | - 55 C | + 150 C | 1 Channel | GaN | 600 V | 13 A | 290 mOhms | 2 nC | X-GaN | ||||||||
|
|
見積もりを取得 |
7,921
在庫あり
|
ROHM Semiconductor | MOSFET SW MOSFET MID PWR N-CH 20V 2A | 10 V | SMD/SMT | SOT-563T-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2 A | 75 mOhms | 300 mV | 2 nC | Enhancement | |||
|
|
|
見積もりを取得 |
4,880
在庫あり
|
ON Semiconductor | MOSFET NCH 4V DRIVE SERIES | 20 V | SMD/SMT | SOT-323-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.8 A | 135 mOhms | 1.2 V | 2 nC | Enhancement | ||||
|
|
見積もりを取得 |
4,995
在庫あり
|
ON Semiconductor | MOSFET NCH 4V DRIVE SERIES | 20 V | SMD/SMT | SOT-563-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.8 A | 330 mOhms | 1.2 V | 2 nC | Enhancement |
