- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- 選択したフィルタ :
3 プロダクト
| 絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
見積もりを取得 |
2,909
在庫あり
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 12.5mOhms 24nC | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 13.5 mOhms | 7.1 nC | ||||||
|
|
見積もりを取得 |
1
在庫あり
|
ON Semiconductor | MOSFET NFET DPAK 60V .150R TR | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 9 A | 122 mOhms | 3 V | 7.1 nC | |||
|
|
|
見積もりを取得 |
147
在庫あり
|
Infineon / IR | MOSFET 30V 999A SO-8 | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 9 mOhms | 7.1 nC | Enhancement |
