- Vgs - Gate-Source Voltage :
- Package / Case :
- Rds On - Drain-Source Resistance :
- 選択したフィルタ :
4 プロダクト
絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
見積もりを取得 |
8,611
在庫あり
|
Infineon Technologies | MOSFET P-Ch -30V -1.5A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.5 A | 107 mOhms | - 2 V | - 2.9 nC | Enhancement | |||
|
見積もりを取得 |
2,187
在庫あり
|
Infineon Technologies | MOSFET P-Ch -30V -1.5A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.5 A | 107 mOhms | - 2 V | - 2.9 nC | Enhancement | |||
|
見積もりを取得 |
1,850
在庫あり
|
Infineon Technologies | MOSFET P-Ch -30V -1.5A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.5 A | 107 mOhms | - 2 V | - 2.9 nC | Enhancement | |||
|
ビュー | Infineon Technologies | MOSFET SOT-363-6 | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.5 A | 140 mOhms | - 2.9 nC |