- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
-
- 0.0075 Ohms (1)
- 0.013 Ohms (1)
- 0.05 Ohms (2)
- 1 MOhms (1)
- 120 mOhms (1)
- 14 mOhms (1)
- 160 mOhms (7)
- 17 mOhms (1)
- 190 mOhms (1)
- 25 mOhms (1)
- 250 mOhms (1)
- 275 mOhms (1)
- 29 mOhms (1)
- 35 mOhms (3)
- 360 mOhms (3)
- 4.1 mOhms (2)
- 4.5 mOhms (3)
- 4.8 mOhms (1)
- 6.2 mOhms (1)
- 7.7 mOhms (1)
- 7.9 mOhms (1)
- 78 mOhms (1)
- 950 mOhms (2)
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- 選択したフィルタ :
38 プロダクト
| 絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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見積もりを取得 |
13,328
在庫あり
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Nexperia | MOSFET N-CH 30V 1.0 mOhm logic level MOSFET | 20 V | SMD/SMT | LFPAK56-5 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1 MOhms | 1.75 V | 38 nC | Enhancement | |||
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見積もりを取得 |
3,433
在庫あり
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Infineon Technologies | MOSFET MOSFT PCh -12V -11.5A 14mOhm 38nC | 8 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | P-Channel | - 12 V | - 11.5 A | 14 mOhms | 38 nC | |||||||
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見積もりを取得 |
3,222
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Infineon / IR | MOSFET MOSFT 80V 6.3A 29mOhm 38nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 80 V | 6.3 A | 29 mOhms | 38 nC | |||||||
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見積もりを取得 |
3,059
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Infineon Technologies | MOSFET 20V DUAL P-CH HEXFET 17mOhms 38nC | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 12 V | - 9.2 A | 17 mOhms | 38 nC | Enhancement | ||||
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見積もりを取得 |
2,662
在庫あり
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Infineon / IR | MOSFET 30V 1 N-CH HEXFET 4.5mOhms 38nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 140 A | 4.5 mOhms | 1.4 V to 2.3 V | 38 nC | Enhancement | |||
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見積もりを取得 |
830
在庫あり
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STMicroelectronics | MOSFET N-Ch, 600V-0.85ohms 7A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 950 mOhms | 3.75 V | 38 nC | Enhancement | |||
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見積もりを取得 |
2,541
在庫あり
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Infineon Technologies | MOSFET MOSFT 30V 8.5A 22mOhm 38nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 8.5 A | 35 mOhms | 38 nC | |||||||
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見積もりを取得 |
439
在庫あり
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STMicroelectronics | MOSFET N-Ch 600 Volt 7 Amp Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 950 mOhms | 38 nC | Enhancement | ||||
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見積もりを取得 |
100
在庫あり
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IXYS | MOSFET MOSFET 650V/22A Ultra Junction X2 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22 A | 160 mOhms | 2.7 V | 38 nC | Enhancement | |||
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見積もりを取得 |
185
在庫あり
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IXYS | MOSFET MOSFET 650V/22A Ultra Junction X2 | 30 V | Through Hole | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22 A | 160 mOhms | 2.7 V | 38 nC | Enhancement | |||
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見積もりを取得 |
98
在庫あり
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IXYS | MOSFET MOSFET 650V/22A Ultra Junction X2 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22 A | 160 mOhms | 2.7 V | 38 nC | Enhancement | |||
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見積もりを取得 |
23,995
在庫あり
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Vishay Semiconductors | MOSFET 60V 16A 53W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 16 A | 0.05 Ohms | - 2.5 V | 38 nC | Enhancement | TrenchFET | ||
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見積もりを取得 |
52
在庫あり
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IXYS | MOSFET 600V 22A 0.36Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 360 mOhms | 5 V | 38 nC | HyperFET | |||||
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見積もりを取得 |
29
在庫あり
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IXYS | MOSFET 32 Amps 200V 78 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 32 A | 78 mOhms | 5 V | 38 nC | Enhancement | Trench | ||
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見積もりを取得 |
38
在庫あり
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IXYS | MOSFET 600V 22A 0.36Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-3P-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 360 mOhms | 5 V | 38 nC | HyperFET | |||||
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見積もりを取得 |
439
在庫あり
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ROHM Semiconductor | MOSFET N-Ch 650V SiC 21A 120mOhm TrenchMOS | - 4 V to 22 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 650 V | 21 A | 120 mOhms | 5.6 V | 38 nC | Enhancement | |||
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見積もりを取得 |
2,325
在庫あり
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Texas Instruments | MOSFET 40V N-Channel NexFET Power MOSFET 8-VSONP -55... | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 4.1 mOhms | 1.5 V | 38 nC | Enhancement | |||
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見積もりを取得 |
3,238
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Toshiba | MOSFET U-MOSVIII-H 60V 71A 38nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 71 A | 4.8 mOhms | 2 V to 4 V | 38 nC | Enhancement | |||
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見積もりを取得 |
156
在庫あり
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Texas Instruments | MOSFET 100V 6.4mOhm Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 200 A | 7.7 mOhms | 2.7 V | 38 nC | Enhancement | NexFET | ||
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見積もりを取得 |
451
在庫あり
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Texas Instruments | MOSFET 80V N-CH NexFET Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 100 A | 6.2 mOhms | 2.6 V | 38 nC | NexFET | |||
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見積もりを取得 |
65
在庫あり
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Toshiba | MOSFET N-Ch 15.8A 130W FET 600V 1350pF 38nC | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 160 mOhms | 2.7 V to 3.7 V | 38 nC | Enhancement | ||||
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見積もりを取得 |
200
在庫あり
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Toshiba | MOSFET MOSFET NCh 8 mOhms VGS10V10uAVDS100V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 100 V | 34 A | 7.9 mOhms | 2 V to 4 V | 38 nC | Enhancement | ||||
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見積もりを取得 |
250
在庫あり
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Texas Instruments | MOSFET 40V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | SON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 4.1 mOhms | 1.5 V | 38 nC | Enhancement | NexFET | ||
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見積もりを取得 |
5,000
在庫あり
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STMicroelectronics | MOSFET 100 V Mosfet 35 RDS 25A D2PAK | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 25 A | 35 mOhms | 2.5 V | 38 nC | ||||
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見積もりを取得 |
2,844
在庫あり
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Infineon / IR | MOSFET MOSFT 30V 140A 4.5mOhm 38nC Log Lvl | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 140 A | 4.5 mOhms | 38 nC | Enhancement | ||||
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見積もりを取得 |
3,000
在庫あり
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Vishay Semiconductors | MOSFET 30V 30A 46W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 0.0075 Ohms | 1.2 V | 38 nC | Enhancement | TrenchFET | ||
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ビュー | IXYS | MOSFET 600V 22A 0.36Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 360 mOhms | 5 V | 38 nC | HyperFET | ||||||
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ビュー | Vishay / Siliconix | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 16 A | 0.05 Ohms | - 2.5 V | 38 nC | Enhancement | ||||
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|
|
ビュー | Vishay Semiconductors | MOSFET P Ch -12Vds 8Vgs AEC-Q101 Qualified | +/- 8 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 15 A | 0.013 Ohms | - 1 V | 38 nC | Enhancement | ||||
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|
見積もりを取得 |
792
在庫あり
|
Toshiba | MOSFET DTMOSIV 600V 190mOhm 15.8A 130W 1350pF | 30 V | SMD/SMT | TO-262-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 190 mOhms | 2.7 V to 3.7 V | 38 nC | DTMOSIV |
