- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
2 プロダクト
| 絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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5,609
在庫あり
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Toshiba | MOSFET N-Ch U-MOSVI FET ID 6A 30VDSS 340pF | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6 A | 56 mOhms | 1.3 V to 2.5 V | 2.7 nC | ||
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見積もりを取得 |
1,232
在庫あり
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Toshiba | MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS 4.5GD | 20 V | SMD/SMT | uDFN-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 4 A | 64 mOhms | 1.3 V to 2.5 V | 2.5 nC |
