- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Channel Mode :
11 プロダクト
絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
見積もりを取得 |
11,766
在庫あり
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Vishay Semiconductors | MOSFET -200v -12A 83W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 12 A | 0.178 Ohms | - 3.5 V | 106 nC | Enhancement | TrenchFET | |||
|
見積もりを取得 |
5,637
在庫あり
|
Infineon Technologies | MOSFET N-Ch 60V 230mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 230 mA | 1.7 Ohms | - 3.5 V | 1.4 nC | Depletion | ||||
|
見積もりを取得 |
3,448
在庫あり
|
Vishay / Siliconix | MOSFET P-Chnl 150-V (D-S) AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 150 V | - 0.84 A | 1.3 Ohms | - 3.5 V | 10 nC | Enhancement | TrenchFET | |||
|
見積もりを取得 |
3,440
在庫あり
|
Infineon Technologies | MOSFET N-Ch 60V 230mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 230 mA | 1.7 Ohms | - 3.5 V | 1.4 nC | Depletion | ||||
|
見積もりを取得 |
9
在庫あり
|
IXYS | MOSFET 10 Amps 1000V 1.4 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.4 Ohms | - 3.5 V | 130 nC | Enhancement | ||||
|
見積もりを取得 |
3
在庫あり
|
IXYS | MOSFET 20 Amps 500V 0.33 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 20 A | 330 mOhms | - 3.5 V | 78.5 nC | Depletion | ||||
|
見積もりを取得 |
3,746
在庫あり
|
Toshiba | MOSFET P-Ch Sm Sig FET Id -0.2A -60V 20V | SMD/SMT | SOT-346-3 | Reel | Si | P-Channel | - 60 V | - 200 mA | 1.3 Ohms | - 3.5 V | ||||||||||
|
見積もりを取得 |
11,984
在庫あり
|
Infineon Technologies | MOSFET N-Ch 60V 230mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 230 mA | 1.7 Ohms | - 3.5 V | 1.4 nC | Depletion | ||||
|
ビュー | Infineon Technologies | MOSFET N-Ch 60V 230mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 230 mA | 1.7 Ohms | - 3.5 V | 1.4 nC | Depletion | |||||
|
ビュー | Vishay / Siliconix | MOSFET P-Channel 80V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 80 V | - 48 A | 0.023 Ohms | - 3.5 V | 145 nC | Enhancement | TrenchFET | ||||
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ビュー | Infineon Technologies | MOSFET N-Ch 60V 230mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 230 mA | 1.7 Ohms | - 3.5 V | 1.4 nC | Depletion |