- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
2 プロダクト
| 絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Vishay / Siliconix | MOSFET N Ch P Ch 100/-100V AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 100 V, - 100 V | 15 A, - 9.5 A | 36.5 mOhms, 118.4 mOhms | 1.5 V, - 2.5 V | 15 nC, 20 nC | Enhancement | ||
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ビュー | Vishay Semiconductors | MOSFET N Ch 30Vds 20Vgs AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 7.3 A, - 5.3 A | 0.021 Ohms, 0.056 Ohms | 1.5 V, - 2.5 V | 5.9 nC, 7.9 nC | Enhancement |
