- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
10 プロダクト
絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
見積もりを取得 |
7,326
在庫あり
|
ON Semiconductor | MOSFET NCH 1.7A 30V SOT-363 | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 1.8 A | 188 mOhms | 2.6 V | 2 nC | |||||
|
見積もりを取得 |
14
在庫あり
|
Texas Instruments | MOSFET 100V, 4.0 mOhm, SON5x6 N-Channel NexFET Power MO... | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 4.9 mOhms | 2.6 V | 48 nC | Enhancement | NexFET | |||
|
見積もりを取得 |
13,390
在庫あり
|
Texas Instruments | MOSFET 100V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 200 A | 16.6 mOhms | 2.6 V | 16 nC | Enhancement | ||||
|
見積もりを取得 |
157
在庫あり
|
Texas Instruments | MOSFET 100V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 200 A | 5.3 mOhms | 2.6 V | 44 nC | NexFET | ||||
|
見積もりを取得 |
298
在庫あり
|
Texas Instruments | MOSFET 80V N-CH NexFET Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 100 A | 2.9 mOhms | 2.6 V | 76 nC | NexFET | ||||
|
見積もりを取得 |
451
在庫あり
|
Texas Instruments | MOSFET 80V N-CH NexFET Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 100 A | 6.2 mOhms | 2.6 V | 38 nC | NexFET | ||||
|
見積もりを取得 |
150
在庫あり
|
Texas Instruments | MOSFET 80 V, N-Channel NexFET Power MOSFET 3-DDPAK/TO... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 200 A | 2.6 mOhms | 2.6 V | 76 nC | Enhancement | NexFET | |||
|
見積もりを取得 |
1,200
在庫あり
|
STMicroelectronics | MOSFET 1200V silicon carbide MOSFET | - 10 V, + 25 V | Through Hole | HiP247-3 | - 55 C | + 200 C | Tube | 1 Channel | SiC | N-Channel | 1.2 kV | 45 A | 80 mOhms | 2.6 V | 105 nC | |||||
|
見積もりを取得 |
9,950
在庫あり
|
Texas Instruments | MOSFET 100V 4.0 mOhm N-Ch NexFET Power MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 200 A | 4.9 mOhms | 2.6 V | 48 nC | Enhancement | NexFET | |||
|
見積もりを取得 |
750
在庫あり
|
Texas Instruments | MOSFET 100V N-Channel NexFET" Power MOSFET 8-VSON-CLI... | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 16.6 mOhms | 2.6 V | 16 nC | Enhancement |