- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
15 プロダクト
絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
見積もりを取得 |
4,262
在庫あり
|
Infineon Technologies | MOSFET MOSFT PCh -100V -23A 117mOhm 64.7nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | P-Channel | - 100 V | - 23 A | 117 mOhms | 64.7 nC | ||||||||
|
見積もりを取得 |
994
在庫あり
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 24 A | 117 mOhms | 2 V | 41.5 nC | Enhancement | |||||
|
見積もりを取得 |
1,000
在庫あり
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-262-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 24 A | 117 mOhms | 2 V | 41.5 nC | Enhancement | |||||
|
見積もりを取得 |
1,402
在庫あり
|
Infineon / IR | MOSFET MOSFT PCh -100V -23A 117mOhm 64.7nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 100 V | - 23 A | 117 mOhms | 64.7 nC | ||||||||
|
見積もりを取得 |
899
在庫あり
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-263-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 24 A | 117 mOhms | 2 V | 41.5 nC | Enhancement | |||||
|
見積もりを取得 |
949
在庫あり
|
Infineon Technologies | MOSFET MOSFT PCh -100V -23A 117mOhm 64.7nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | P-Channel | - 100 V | - 23 A | 117 mOhms | 64.7 nC | ||||||||
|
見積もりを取得 |
653
在庫あり
|
Infineon Technologies | MOSFET MOSFT PCh -21A 117mOhm 64.7nCAC | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | P-Channel | - 100 V | - 21 A | 117 mOhms | 64.7 nC | ||||||||
|
見積もりを取得 |
1,378
在庫あり
|
ON Semiconductor | MOSFET NCH 4.5A 60V SOT-89 | SOT-89-3 | Reel | Si | N-Channel | 60 V | 4.5 A | 117 mOhms | ||||||||||||
|
見積もりを取得 |
809
在庫あり
|
Infineon Technologies | MOSFET 1 P-CH -100V HEXFET 117mOhms 64.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 23 A | 117 mOhms | - 4 V | 64.7 nC | Enhancement | ||||
|
見積もりを取得 |
390
在庫あり
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 24 A | 117 mOhms | 2 V | 41.5 nC | Enhancement | |||||
|
見積もりを取得 |
371
在庫あり
|
Infineon / IR | MOSFET AUTO -100V 1 P-CH HEXFET 117mOhms | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | P-Channel | - 100 V | - 23 A | 117 mOhms | 64.7 nC | ||||||||
|
見積もりを取得 |
4,896
在庫あり
|
Texas Instruments | MOSFET N-CH NexFET Pwr MOSFET | 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.1 A | 117 mOhms | 850 mV | 1.04 nC | NexFET | ||||
|
見積もりを取得 |
7,865
在庫あり
|
Texas Instruments | MOSFET 30V,N-Ch FemtoFET MOSFET | 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.1 A | 117 mOhms | 850 mV | 1.04 nC | |||||
|
見積もりを取得 |
57,000
在庫あり
|
ON Semiconductor | MOSFET -8V -1.4A P-Channel | 8 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 8 V | - 1.4 A | 117 mOhms | Enhancement | ||||||
|
見積もりを取得 |
1,500
在庫あり
|
Infineon Technologies | MOSFET 1 P-CH -100V HEXFET 117mOhms 64.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 23 A | 117 mOhms | 64.7 nC | Enhancement |