- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
4 プロダクト
| 絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
見積もりを取得 |
946
在庫あり
|
Nexperia | MOSFET N-CH 30 V 13.6 MOHMS LOGIC LEVEL MOSFET | SMD/SMT | LFPAK56-5 | Reel | 1 Channel | Si | N-Channel | 30 V | 32 A | 16.9 mOhms | ||||||||
|
|
見積もりを取得 |
1,345
在庫あり
|
ON Semiconductor | MOSFET PCH 1.8V DRIVE SERIES | SOT-363-6 | Reel | 1 Channel | Si | P-Channel | - 12 V | - 9 A | 16.9 mOhms | |||||||||
|
|
見積もりを取得 |
633
在庫あり
|
Nexperia | MOSFET N-channel MOSFET logic level LFPAK33 | 1.95 V | SMD/SMT | LFPAK33-5 | Reel | 1 Channel | Si | N-Channel | 27 V | 39 A | 16.9 mOhms | |||||||
|
|
見積もりを取得 |
6,000
在庫あり
|
ROHM Semiconductor | MOSFET Nch 30V 4.5A Si MOSFET | 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4.5 A | 16.9 mOhms | 500 mV | 8.1 nC | Enhancement |
