- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
6 プロダクト
| 絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
見積もりを取得 |
2,473
在庫あり
|
Fairchild Semiconductor | MOSFET 80V 90A Dual DPAK N-Chnl PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 80 V | 90 A | 17.4 mOhms | 2 V | 34 nC | Enhancement | |||
|
|
見積もりを取得 |
1,647
在庫あり
|
ON Semiconductor | MOSFET NFET WDFN8 30V 9A 20MOHM | SMD/SMT | WDFN-8 | Reel | Si | N-Channel | 30 V | 8.3 A | 17.4 mOhms | ||||||||||
|
|
見積もりを取得 |
1,650
在庫あり
|
Nexperia | MOSFET N-channel 100 V 22 mo FET | 10 V | SMD/SMT | LFPAK56-5 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 49 A | 17.4 mOhms | 1.7 V | 35.8 nC | ||||
|
|
見積もりを取得 |
807
在庫あり
|
Infineon Technologies | MOSFET N-Ch 75V 30A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 30 A | 17.4 mOhms | 2.1 V | 57 nC | Enhancement | OptiMOS | ||
|
|
見積もりを取得 |
3,000
在庫あり
|
ROHM Semiconductor | MOSFET Pch -30V -18A Si MOSFET | +/- 20 V | SMD/SMT | HSMT-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 18 A | 17.4 mOhms | - 2.5 V | 21 nC | Enhancement | |||
|
|
|
ビュー | Infineon Technologies | MOSFET N-Ch 75V 30A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 30 A | 17.4 mOhms | 2.1 V | 57 nC | Enhancement |
