- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
4 プロダクト
| 絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
見積もりを取得 |
9,650
在庫あり
|
Infineon / IR | MOSFET DUAL MOSFT 8.1A 2.5V 18mOhm drv cpbl | 12 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel | 30 V | 8.1 A | 17.9 mOhms | 11 nC | ||||||
|
|
見積もりを取得 |
5,705
在庫あり
|
Infineon / IR | MOSFET 30V 1 N-CH HEXFET 12.4mOhms 5.4nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 29 A | 17.9 mOhms | 1.35 V to 2.35 V | 5.4 nC | Enhancement | ||
|
|
見積もりを取得 |
3,000
在庫あり
|
Vishay Semiconductors | MOSFET 80V Vds 30A Id AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 30 A | 17.9 mOhms | 2.5 V | 25 nC | Enhancement | ||
|
|
|
見積もりを取得 |
8
在庫あり
|
Infineon / IR | MOSFET 30V DUAL N-CH LO LOGIC LEVEL | 12 V | SMD/SMT | SO-8 | Tube | 2 Channel | Si | N-Channel | 30 V | 8.1 A | 17.9 mOhms | 11 nC |
