- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Id - Continuous Drain Current :
11 プロダクト
絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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8,984
在庫あり
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Infineon Technologies | MOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 50 A | 9.2 mOhms | - 4 V | 51 nC | Enhancement | OptiMOS | |||
|
見積もりを取得 |
3,367
在庫あり
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | Si | N-Channel | 120 V | 75 A | 9.2 mOhms | 3 V | 49 nC | Enhancement | |||||
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見積もりを取得 |
2,080
在庫あり
|
Nexperia | MOSFET N-channel 80 V 14 mo FET | 20 V | SMD/SMT | LFPAK56-5 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 65 A | 9.2 mOhms | 3 V | 44.8 nC | Enhancement | ||||
|
見積もりを取得 |
1,330
在庫あり
|
Infineon Technologies | MOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 50 A | 9.2 mOhms | - 4 V | 51 nC | Enhancement | ||||
|
見積もりを取得 |
5
在庫あり
|
Infineon Technologies | MOSFET N-Ch 30V 12.1A DSO-8 OptiMOS 3M | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12.1 A | 9.2 mOhms | 1 V | 20 nC | Enhancement | OptiMOS | |||
|
見積もりを取得 |
1,100
在庫あり
|
Infineon Technologies | MOSFET N-Ch 30V 12.1A DSO-8 OptiMOS 3M | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12.1 A | 9.2 mOhms | 1 V | 20 nC | Enhancement | OptiMOS | |||
|
ビュー | Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 9.2mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 87 A | 9.2 mOhms | 48 nC | Enhancement | |||||||
|
ビュー | Infineon Technologies | MOSFET N-Ch 60V 45A D2PAK-2 | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 45 A | 9.2 mOhms | ||||||||||||
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ビュー | Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 9.2mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 87 A | 9.2 mOhms | 48 nC | Enhancement | |||||||
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ビュー | Infineon / IR | MOSFET AUTO 40V 1 N-CH HEXFET 9.2mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 87 A | 9.2 mOhms | 48 nC | Enhancement | |||||||
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ビュー | Infineon / IR | MOSFET AUTO 40V 1 N-CH HEXFET 9.2mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 87 A | 9.2 mOhms | 48 nC | Enhancement |