- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
20 プロダクト
| 絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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見積もりを取得 |
2,235
在庫あり
|
Infineon Technologies | MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 73 A | 7.9 mOhms | 2 V | 35 nC | Enhancement | |||
|
|
見積もりを取得 |
2,780
在庫あり
|
Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 87 A | 7.9 mOhms | 3 V | 40.7 nC | Enhancement | OptiMOS | ||
|
|
見積もりを取得 |
2,194
在庫あり
|
STMicroelectronics | MOSFET N-Ch 60V 6.6mOhm 77A STripFET VI | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 60 V | 77 A | 7.9 mOhms | 76 nC | |||||||
|
|
見積もりを取得 |
2,496
在庫あり
|
Fairchild Semiconductor | MOSFET MV8 40/20V 740A N-Channel Power Trench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 7.9 mOhms | 2 V | 24 nC | Enhancement | PowerTrench | ||
|
|
|
見積もりを取得 |
1,107
在庫あり
|
Infineon Technologies | MOSFET 60V StrongIRFET Power Mosfet | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 71 A | 7.9 mOhms | 3.7 V | 58 nC | StrongIRFET | |||
|
|
|
見積もりを取得 |
602
在庫あり
|
Infineon Technologies | MOSFET MOSFT 100V 65A 9.3mOhm 83nC | 30 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 100 V | 43 A | 7.9 mOhms | 81 nC | ||||||||
|
|
見積もりを取得 |
266
在庫あり
|
Infineon Technologies | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 7.9 mOhms | 71 nC | OptiMOS | ||||
|
|
|
見積もりを取得 |
730
在庫あり
|
Infineon Technologies | MOSFET P-Ch -40V -80A TO220-3 OptiMOS-P2 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 7.9 mOhms | OptiMOS | ||||||||
|
|
見積もりを取得 |
3,548
在庫あり
|
Texas Instruments | MOSFET CSD83325L, Dual N-Ch nel NexFET? | 10 V, 10 V | SMD/SMT | BGA-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 12 V, 12 V | 8 A | 7.9 mOhms | 750 mV | 10.9 nC | Enhancement | NexFET | ||
|
|
見積もりを取得 |
860
在庫あり
|
Texas Instruments | MOSFET 30V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 7.9 mOhms | 1.1 V | 7.9 nC | Enhancement | |||
|
|
見積もりを取得 |
200
在庫あり
|
Toshiba | MOSFET MOSFET NCh 8 mOhms VGS10V10uAVDS100V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 100 V | 34 A | 7.9 mOhms | 2 V to 4 V | 38 nC | Enhancement | ||||
|
|
|
見積もりを取得 |
5,000
在庫あり
|
Infineon Technologies | MOSFET N-Ch 100V 100A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 13.4 A | 7.9 mOhms | Enhancement | OptiMOS | ||||
|
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ビュー | Infineon Technologies | MOSFET P-Ch -40V -80A I2PAK-3 OptiMOS-P2 | TO-262-3 | Tube | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 7.9 mOhms | OptiMOS | ||||||||||
|
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ビュー | Infineon Technologies | MOSFET N-Ch 30V 14A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 7.9 mOhms | Enhancement | ||||||
|
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ビュー | Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 7.9mOhms | 20 V | SMD/SMT | DirectFET-L6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 156 A | 7.9 mOhms | 89 nC | Enhancement | |||||
|
|
|
見積もりを取得 |
443
在庫あり
|
Infineon Technologies | MOSFET N-Ch 60V 45A TO220-3 OptiMOS-T2 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 45 A | 7.9 mOhms | OptiMOS | ||||||||
|
|
|
見積もりを取得 |
910
在庫あり
|
Infineon Technologies | MOSFET N-Ch 60V 45A D2PAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 45 A | 7.9 mOhms | 49 nC | OptiMOS | ||||
|
|
|
見積もりを取得 |
440
在庫あり
|
Infineon Technologies | MOSFET N-Ch 60V 45A TO220-3 OptiMOS-T2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 45 A | 7.9 mOhms | 2 V | 47 nC | Enhancement | OptiMOS | ||
|
|
|
見積もりを取得 |
59
在庫あり
|
Infineon / IR | MOSFET MOSFT 100V 97A 9.3mOhm 81nC | 30 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 100 V | 43 A | 7.9 mOhms | 81 nC | ||||||||
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ビュー | Infineon Technologies | MOSFET N-Ch 60V 45A D2PAK-2 | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 45 A | 7.9 mOhms |
