- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
2 プロダクト
| 絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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見積もりを取得 |
78
在庫あり
|
Infineon Technologies | MOSFET MOSFT 40V 350A 1.7mOhm 220nC Qg | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 350 A | 1.35 mOhms | 220 nC | |||
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|
見積もりを取得 |
8,906
在庫あり
|
Toshiba | MOSFET P-Channel Mosfet 20V UMOS-VI | 12 V | SMD/SMT | SOP-Advance-8 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 60 A | 1.35 mOhms | 182 nC | Enhancement |
