- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Tradename :
- 選択したフィルタ :
4 プロダクト
| 絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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見積もりを取得 |
320
在庫あり
|
IXYS | MOSFET TRENCH HIPERFET PWR MOSFET 100V 420A | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | Si | N-Channel | 100 V | 420 A | 2.3 mOhms | 5 V | 670 nC | Enhancement | HiPerFET | |||
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見積もりを取得 |
100
在庫あり
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IXYS | MOSFET TRENCH HIPERFET PWR MOSFET 100V 420A | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 100 V | 420 A | 2.6 mOhms | 5 V | 670 nC | Enhancement | GigaMOS, HiperFET | ||
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見積もりを取得 |
150
在庫あり
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IXYS | MOSFET TRENCH HIPERFET PWR MOSFET 100V 420A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 100 V | 420 A | 2.6 mOhms | 5 V | 670 nC | Enhancement | GigaMOS, HiperFET | ||
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ビュー | IXYS | MOSFET Trench T2 Power MOSFET | Through Hole | TO-247-3 | Tube | Si | N-Channel | 40 V | 420 A | 2 mOhms |
