- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- 選択したフィルタ :
15 プロダクト
| 絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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見積もりを取得 |
5,310
在庫あり
|
Infineon / IR | MOSFET MOSFT 20V 8.7A 22mOhm 32nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 8.7 A | 22 mOhms | 0.7 V | 48 nC | ||||
|
|
見積もりを取得 |
2,920
在庫あり
|
Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 190mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 100 V | 8.7 A | 190 mOhms | 6.9 nC | Enhancement | |||||
|
|
|
見積もりを取得 |
3,740
在庫あり
|
Infineon / IR | MOSFET 20V 1 N-CH HEXFET 22mOhms 32nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 20 V | 8.7 A | 22 mOhms | 0.7 V | 32 nC | Enhancement | |||
|
|
|
見積もりを取得 |
4,809
在庫あり
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 26mOhms 70nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 8.7 A | 150 mOhms | 4 V | 6.9 nC | Enhancement | |||
|
|
見積もりを取得 |
875
在庫あり
|
Infineon Technologies | MOSFET N-Ch 650V 8.7A D2PAK-2 CoolMOS CFD2 | 30 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 650 V | 8.7 A | 420 mOhms | 4 V | 32 nC | CoolMOS | |||||
|
|
見積もりを取得 |
2,151
在庫あり
|
Nexperia | MOSFET RAIL PWR-MOS | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 8.7 A | 400 mOhms | Enhancement | |||||
|
|
見積もりを取得 |
336
在庫あり
|
Infineon Technologies | MOSFET 150V 2 x N-CH 8.7A for Digital Audio | 20 V | Through Hole | TO-220-3 | - 40 C | Tube | 2 Channel | Si | N-Channel | 150 V | 8.7 A | 80 mOhms | 13 nC | Enhancement | |||||
|
|
|
見積もりを取得 |
660
在庫あり
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 26mOhms 70nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 8.7 A | 190 mOhms | 6.9 nC | Enhancement | ||||
|
|
|
見積もりを取得 |
475
在庫あり
|
Infineon Technologies | MOSFET N-Ch 650V 8.7A TO220-3 CoolMOS CFD2 | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 8.7 A | 420 mOhms | 4 V | 32 nC | CoolMOS | |||||
|
|
見積もりを取得 |
316
在庫あり
|
Infineon Technologies | MOSFET N-Ch 650V 8.7A TO220FP CoolMOS CFD2 | 30 V | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 8.7 A | 420 mOhms | 4 V | 32 nC | CoolMOS | |||||
|
|
見積もりを取得 |
176
在庫あり
|
Infineon Technologies | MOSFET N-Ch 650V 8.7A TO247-3 CoolMOS CFD2 | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 8.7 A | 420 mOhms | 4 V | 32 nC | CoolMOS | |||||
|
|
見積もりを取得 |
448
在庫あり
|
Infineon Technologies | MOSFET N-Ch 650V 8.7A I2PAK-3 CoolMOS CFD2 | 30 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 8.7 A | 420 mOhms | 4 V | 32 nC | CoolMOS | |||||
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ビュー | Infineon Technologies | MOSFET N-Ch 650V 8.7A DPAK-2 | SMD/SMT | TO-252-3 | Reel | Si | N-Channel | 650 V | 8.7 A | 420 mOhms | CoolMOS | ||||||||||
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|
|
見積もりを取得 |
774
在庫あり
|
Infineon / IR | MOSFET MOSFT DUAL NCh 150V 8.7A 5-Pin | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 2 Channel | Si | N-Channel | 150 V | 8.7 A | 80 mOhms | 13 nC | Enhancement | |||||
|
|
|
見積もりを取得 |
550
在庫あり
|
Infineon / IR | MOSFET MOSFT 100V 8.7A 190mOhm 6.9nC Qg | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 8.7 A | 190 mOhms | 6.9 nC |
