- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- 選択したフィルタ :
6 プロダクト
| 絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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見積もりを取得 |
95
在庫あり
|
IXYS | MOSFET Polar Power MOSFET HiPerFET | 20 V | Screw Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 295 A | 5.5 mOhms | 5 V | 279 nC | Enhancement | Polar, HiPerFET | ||
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|
見積もりを取得 |
1,767
在庫あり
|
Infineon / IR | MOSFET 40V 195A 1.5mOhm 150nC StrongIRFET | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 295 A | 1.4 mOhms | 3.9 V | 225 nC | Enhancement | StrongIRFET | |||
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見積もりを取得 |
416
在庫あり
|
Infineon / IR | MOSFET MOSFET N CH 60V 195A D2PAK | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 295 A | 2 mOhms | 3.7 V | 411 nC | StrongIRFET | ||||||
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|
見積もりを取得 |
435
在庫あり
|
Infineon Technologies | MOSFET MOSFET N CH 60V 195A TO-220AB | 20 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 60 V | 295 A | 1.65 mOhms | 3.7 V | 274 nC | Enhancement | StrongIRFET | |||||
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|
見積もりを取得 |
275
在庫あり
|
Infineon / IR | MOSFET 40V 295A 1.8mOhm Automotive MOSFET | Through Hole | TO-262-3 | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 295 A | 1.8 mOhms | 150 nC | |||||||
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|
見積もりを取得 |
95
在庫あり
|
Infineon / IR | MOSFET 40V, 195A, 1.4 mOhm 150 nC Qg, D2-7pin | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 295 A | 1.4 mOhms | 225 nC | StrongIRFET |
