- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- 選択したフィルタ :
11 プロダクト
| 絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
見積もりを取得 |
10,360
在庫あり
|
Fairchild Semiconductor | MOSFET Dual PCh Digital | 12 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 500 mA | 780 mOhms | Enhancement | ||||
|
|
|
見積もりを取得 |
3,422
在庫あり
|
Fairchild Semiconductor | MOSFET Dual PCh Digital | 12 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 500 mA | 780 mOhms | Enhancement | ||||
|
|
見積もりを取得 |
576
在庫あり
|
Diodes Incorporated | MOSFET 100V P-Ch Enh FET 20Vgs -0.5A ID 625mW | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 500 mA | 1.45 Ohms | - 4 V | 1.8 nC | Enhancement | ||
|
|
見積もりを取得 |
8,613
在庫あり
|
Nexperia | MOSFET Trench Mosfet 20V, P-channel | 8 V | SMD/SMT | DFN1006-3 | - 55 C | + 150 C | Reel | Si | P-Channel | - 20 V | - 500 mA | 1.02 Ohms | - 0.7 V | 1.19 nC | Enhancement | |||
|
|
見積もりを取得 |
1,773
在庫あり
|
Nexperia | MOSFET 20V P-channel Trench MOSFET | +/- 8 V | SMD/SMT | DFN1006B-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 500 mA | 1.02 Ohms | - 700 mV | 1.19 nC | Enhancement | ||
|
|
見積もりを取得 |
305
在庫あり
|
Microchip Technology | MOSFET 16.5V 1.5Ohm | 10 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | P-Channel | - 16.5 V | - 500 mA | 1.5 Ohms | Enhancement | ||||
|
|
|
ビュー | Microchip Technology | MOSFET P-CH Enhancmnt Mode MOSFET | 10 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 16.5 V | - 500 mA | 4 Ohms | Enhancement | |||||
|
|
|
ビュー | Microchip Technology | MOSFET P-CH Enhancmnt Mode MOSFET | 10 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 16.5 V | - 500 mA | 4 Ohms | Enhancement | |||||
|
|
|
ビュー | Microchip Technology | MOSFET P-CH Enhancmnt Mode MOSFET | 10 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 16.5 V | - 500 mA | 4 Ohms | Enhancement | |||||
|
|
|
ビュー | Microchip Technology | MOSFET P-CH Enhancmnt Mode MOSFET | Through Hole | TO-92-3 | Reel | 1 Channel | Si | P-Channel | - 16.5 V | - 500 mA | 4 Ohms | Enhancement | ||||||||
|
|
|
ビュー | Microchip Technology | MOSFET P-CH Enhancmnt Mode MOSFET | 10 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 16.5 V | - 500 mA | 4 Ohms | Enhancement |
