- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- 選択したフィルタ :
6 プロダクト
| 絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
見積もりを取得 |
2,779
在庫あり
|
Diodes Incorporated | MOSFET Transistor Array | +/- 6 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel, PNP | 20 V | 630 mA | 300 mOhms | 500 mV | 736.6 pC | Enhancement | ||
|
|
見積もりを取得 |
2,880
在庫あり
|
ON Semiconductor | MOSFET NFET SC88 20V 630MA 375MO | SMD/SMT | SOT-363-6 | Reel | Si | N-Channel | 20 V | 630 mA | 375 mOhms | |||||||||
|
|
見積もりを取得 |
1,432
在庫あり
|
Diodes Incorporated | MOSFET MOSFET BVDSS: | 6 V | SMD/SMT | SOT-523-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 630 mA | 300 mOhms | 500 mV | 736.6 pC | Enhancement | ||
|
|
|
見積もりを取得 |
186,988
在庫あり
|
Diodes Incorporated | MOSFET MOSFET N-CHANNEL SOT-523 | 6 V | SMD/SMT | SOT-523-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 630 mA | 300 mOhms | 500 mV | 736.6 pC | Enhancement | ||
|
|
|
見積もりを取得 |
16,950
在庫あり
|
ON Semiconductor | MOSFET 20V/-8V 0.63A/-.775A Complementary | 12 V, 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 8 V | 630 mA | 375 mOhms, 300 mOhms | 1.3 nC, 2.2 nC | Enhancement | |||
|
|
ビュー | ROHM Semiconductor | MOSFET 10V Drive Nch MOSFET | 30 V | SMD/SMT | SOP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 630 mA | 4.4 Ohms | 2 V | 20 nC | Enhancement |
