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| 絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Mounting Style | Package / Case | Maximum Operating Temperature | Series | Packaging | Pd - Power Dissipation | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Breakdown Voltage | Drain-Source Current at Vgs=0 | |
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Infineon Technologies | JFET SIC CHIP/DISCRETE | Through Hole | TO-247-3 | + 175 C | XJY120R100 | Tube | 190 W | N-Channel | 1200 V | 78 A | 100 mOhms | 2 V | 26 A |
