- Package / Case :
- Series :
- Rds On - Drain-Source Resistance :
- Vgs - Gate-Source Breakdown Voltage :
4 プロダクト
| 絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Mounting Style | Package / Case | Maximum Operating Temperature | Series | Packaging | Pd - Power Dissipation | Configuration | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Breakdown Voltage | Drain-Source Current at Vgs=0 | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
見積もりを取得 |
99
在庫あり
|
USCi | JFET 1200V/80mOhm SiC JFET, N-ON, TO-247 | Through Hole | TO-247-3 | + 175 C | 136 W | Single | N-Channel | 1200 V | 21 A | 230 mOhms | +/- 20 V | 21 A | ||||
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|
ビュー | GeneSiC Semiconductor | JFET SiC Super Junc Trans 1200V-Rds 550mO-3A | Through Hole | TO-247AB-3 | + 175 C | GA03 | Tube | 5 W | Single | N-Channel | 1200 V | 3 A | 470 mOhms | |||||
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|
|
見積もりを取得 |
186
在庫あり
|
Infineon Technologies | JFET SIC CHIP/DISCRETE | Through Hole | TO-247-3 | + 175 C | XJY120R100 | Tube | 190 W | N-Channel | 1200 V | 78 A | 100 mOhms | 2 V | 26 A | |||
|
|
|
見積もりを取得 |
236
在庫あり
|
Infineon Technologies | JFET SIC CHIP/DISCRETE | Through Hole | TO-247-3 | + 175 C | XJY120R070 | Tube | 238 W | Single | N-Channel | 1200 V | 114 A | 70 mOhms | 2 V | 35 A |
