- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs - Gate-Source Breakdown Voltage :
2 プロダクト
| 絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Breakdown Voltage | Drain-Source Current at Vgs=0 | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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見積もりを取得 |
99
在庫あり
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USCi | JFET 1200V/80mOhm SiC JFET, N-ON, TO-247 | Through Hole | TO-247-3 | + 175 C | 136 W | Single | N-Channel | 1200 V | 21 A | 230 mOhms | +/- 20 V | 21 A | |||
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見積もりを取得 |
108
在庫あり
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USCi | JFET 1200V/45mOhm SiC JFET N-ON | Through Hole | TO-247-3 | + 175 C | Tube | 230 W | Single | N-Channel | 1.2 kV | 38 A | 35 mOhms | - 20 V to + 20 V |
