- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Maximum Gate Emitter Voltage :
4 プロダクト
絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
見積もりを取得 |
368
在庫あり
|
STMicroelectronics | IGBT Transistors N-CHANNEL MFT | Through Hole | TO-247-3 | + 150 C | Tube | 250 W | Single | 600 V | 1.8 V/1.7 V | +/- 100 nA | +/- 20 V | |||
|
見積もりを取得 |
385
在庫あり
|
STMicroelectronics | IGBT Transistors N-CHANNEL IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 220 W | Single | 1200 V | 2.75 V | +/- 100 nA | +/- 25 V | |||
|
見積もりを取得 |
697
在庫あり
|
STMicroelectronics | IGBT Transistors N-CHANNEL MFT | Through Hole | TO-220-3 FP | + 150 C | Tube | 35 W | Single | 600 V | 1.8 V/1.6 V | +/- 100 nA | +/- 20 V | |||
|
見積もりを取得 |
1,200
在庫あり
|
STMicroelectronics | IGBT Transistors PowerMESH | Through Hole | TO-247-3 | + 150 C | Tube | 250 W | Single | 600 V | 2.5 V | +/- 100 nA | +/- 20 V |