グローバルなメーカーとサプライヤーが信頼できる取引プラットフォームを構築する。
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
3 プロダクト
モデル 価格 数量 株式 メーカー 説明 Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
APT25GT120BRDQ2G
1+
$3.7000
10+
$3.3280
25+
$3.0320
50+
$2.8240
見積もりを取得
RFQ
53
在庫あり
Microsemi IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequ... Through Hole TO-247-3 + 150 C   347 W Single 1.2 kV 3.2 V 54 A 120 nA 30 V
APT25GT120BRG
1+
$2.9280
10+
$2.6360
25+
$2.4000
100+
$2.1680
見積もりを取得
RFQ
125
在庫あり
Microsemi IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequ... Through Hole TO-247-3 + 150 C Tube 347 W Single 1.2 kV 3.2 V 54 A 120 nA 30 V
APT50GT60BRDQ2G
1+
$3.3480
10+
$3.0120
25+
$2.7440
50+
$2.5560
見積もりを取得
RFQ
146
在庫あり
Microsemi IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequ... Through Hole TO-247-3 + 150 C Tube 446 W Single 600 V 2 V 110 A 120 nA 30 V