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3 プロダクト
絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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見積もりを取得 |
53
在庫あり
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequ... | Through Hole | TO-247-3 | + 150 C | 347 W | Single | 1.2 kV | 3.2 V | 54 A | 120 nA | 30 V | ||||
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見積もりを取得 |
125
在庫あり
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequ... | Through Hole | TO-247-3 | + 150 C | Tube | 347 W | Single | 1.2 kV | 3.2 V | 54 A | 120 nA | 30 V | |||
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見積もりを取得 |
146
在庫あり
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequ... | Through Hole | TO-247-3 | + 150 C | Tube | 446 W | Single | 600 V | 2 V | 110 A | 120 nA | 30 V |