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3 プロダクト
絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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見積もりを取得 |
477
在庫あり
|
Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 326 W | Single | 1200 V | 2.7 V | 50 A | 600 mA | 20 V | |||
|
見積もりを取得 |
220
在庫あり
|
Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 326 W | Single | 1200 V | 2.7 V | 50 A | 600 mA | 20 V | |||
|
見積もりを取得 |
230
在庫あり
|
Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 326 W | Single | 1200 V | 2.7 V | 50 A | 600 mA | 20 V |