グローバルなメーカーとサプライヤーが信頼できる取引プラットフォームを構築する。
Collector-Emitter Saturation Voltage :
Maximum Gate Emitter Voltage :
3 プロダクト
モデル 価格 数量 株式 メーカー 説明 Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRG4PH50SPBF
1+
$2.4040
10+
$2.0440
25+
$2.0080
100+
$1.7720
見積もりを取得
RFQ
512
在庫あり
Infineon / IR IGBT Transistors 1200V DC-1kHz Through Hole TO-247-3 + 150 C Tube 200 W Single 1.2 kV 1.75 V 57 A 100 nA 20 V
AUIRG4PH50S
1+
$2.0760
10+
$1.7640
25+
$1.7360
100+
$1.5320
見積もりを取得
RFQ
192
在庫あり
Infineon Technologies IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO I... Through Hole TO-247-3   Tube 200 W Single 1.2 kV 1.7 V 57 A   +/- 20 V
IRG4PH50S-EPBF
1+
$2.2560
10+
$1.9160
25+
$1.8840
100+
$1.6600
見積もりを取得
RFQ
250
在庫あり
Infineon Technologies IGBT Transistors 1200V DC-1kHz w/ exetended lead Through Hole TO-247AD-3   Tube 200 W Single 1.2 kV 1.7 V 57 A   +/- 20 V