- Package / Case :
- Collector-Emitter Saturation Voltage :
- Maximum Gate Emitter Voltage :
3 プロダクト
絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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見積もりを取得 |
512
在庫あり
|
Infineon / IR | IGBT Transistors 1200V DC-1kHz | Through Hole | TO-247-3 | + 150 C | Tube | 200 W | Single | 1.2 kV | 1.75 V | 57 A | 100 nA | 20 V | |||
|
見積もりを取得 |
192
在庫あり
|
Infineon Technologies | IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO I... | Through Hole | TO-247-3 | Tube | 200 W | Single | 1.2 kV | 1.7 V | 57 A | +/- 20 V | |||||
|
見積もりを取得 |
250
在庫あり
|
Infineon Technologies | IGBT Transistors 1200V DC-1kHz w/ exetended lead | Through Hole | TO-247AD-3 | Tube | 200 W | Single | 1.2 kV | 1.7 V | 57 A | +/- 20 V |