- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Pd - Power Dissipation :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
2 プロダクト
| 絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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見積もりを取得 |
14
在庫あり
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IXYS | IGBT Transistors GenX3 XPT 600V | Through Hole | TO-264-3 | + 175 C | Tube | 1.63 kW | Single | 600 V | 1.4 V | 380 A | 200 nA | +/- 20 V | ||
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見積もりを取得 |
134
在庫あり
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Vishay Semiconductors | IGBT Transistors Ic 250A Vce(On)1.10V Sngl Brdge Trench PT | Chassis | SOT-227 | + 150 C | 893 W | Single | 600 V | - | 380 A | +/- 350 nA | 20 V |
