- Package / Case :
- Maximum Operating Temperature :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
5 プロダクト
| 絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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見積もりを取得 |
962
在庫あり
|
Infineon Technologies | IGBT Transistors 650V IGBT Trenchstop 5 | Through Hole | TO-247-3 | + 175 C | Tube | 227 W | Single | 650 V | 1.05 V | 85 A | 100 nA | 20 V | ||
|
|
|
見積もりを取得 |
424
在庫あり
|
Infineon Technologies | IGBT Transistors 650V IGBT Trenchstop 5 | Through Hole | TO-247-3 | + 175 C | Tube | 227 W | Single | 650 V | 1.05 V | 85 A | 100 nA | 20 V | ||
|
|
見積もりを取得 |
50
在庫あり
|
IXYS | IGBT Transistors 320 Amps 600V | Through Hole | TO-264-3 | + 150 C | Tube | 1 kW | Single | 600 V | 1.05 V | 320 A | 400 nA | +/- 20 V | ||
|
|
|
見積もりを取得 |
222
在庫あり
|
Infineon Technologies | IGBT Transistors 650V IGBT Trenchstop 5 | Through Hole | TO-247-3 | + 175 C | Tube | 227 W | Single | 650 V | 1.05 V | 85 A | 100 nA | 20 V | ||
|
|
見積もりを取得 |
30
在庫あり
|
IXYS | IGBT Transistors 320 Amps 600V | Through Hole | PLUS 247-3 | + 150 C | Tube | 1 kW | Single | 600 V | 1.05 V | 320 A | 400 nA | +/- 20 V |
