1 プロダクト
| 絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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在庫あり
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Fairchild Semiconductor | IGBT Transistors 650V 30A FS Planar Gen2 IGBT | Through Hole | TO-3PN-3 | + 175 C | Tube | 300 W | Single | 650 V | 2.29 V | 60 A | 400 nA | +/- 20 V |
