3 プロダクト
絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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見積もりを取得 |
167
在庫あり
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Infineon Technologies | IGBT Transistors 1200V UltraFast 5-40kHz | Through Hole | TO-247-3 | + 150 C | Tube | 160 W | Single | 1.2 kV | 2.43 V | 41 A | 100 nA | +/- 20 V | |||
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見積もりを取得 |
181
在庫あり
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Infineon Technologies | IGBT Transistors 1200V UltraFast 5-40kHz | Through Hole | TO-247-3 | + 150 C | Tube | 160 W | Single | 1.2 kV | 2.43 V | 41 A | 100 nA | +/- 20 V | |||
|
見積もりを取得 |
119
在庫あり
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Infineon / IR | IGBT Transistors 1200V UltraFast 5-40kHz | Through Hole | TO-247-3 | + 150 C | Tube | 160 W | Single | 1.2 kV | 2.43 V | 41 A | 100 nA | +/- 20 V |