- Package / Case :
- Maximum Gate Emitter Voltage :
2 プロダクト
| 絵 | モデル | 価格 | 数量 | 株式 | メーカー | 説明 | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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見積もりを取得 |
561
在庫あり
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STMicroelectronics | IGBT Transistors 1250V 25A trench gate field-stop IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 375 W | Single | 1.25 kV | 2.65 V | 60 A | 250 nA | 20 V | ||
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見積もりを取得 |
232
在庫あり
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STMicroelectronics | IGBT Transistors 1250V 25A trench gte field-stop IGBT | Through Hole | TO-3P-3 | + 175 C | Tube | 375 W | Single | 1.25 kV | 2.65 V | 60 A | 250 nA | +/- 20 V |
